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Effects of AlGaAs energy barriers on InAs/GaAs quantum dot solar cells |
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Πέμπτη, 14 Οκτώβριος 2010 03:30 |
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K. A. Sablon, J. W. Little, K. A. Olver, Zh. M. Wang, V. G. Dorogan et al. We have studied the effects of AlGaAs energy barriers surrounding self-assembled InAs quantum dots in a GaAs matrix on the properties of solar cells made with multiple quantum dot layers in the active region of a photodiode. We have compared the fenced dot samples with conventional InAs/GaAs quantum ... [J. Appl. Phys. 108, 074305 (2010)] published Wed Oct 13, 2010. (Source: Journal of Applied Physics)
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